SiC-JFETs are promising for many future applications but have a normally-on behaviour, which usually necessitates an auxiliary MOSFET to achieve self-blocking capability. However this characteristic is predestinated to current source inverter topologies as an attractive alternative for fast switching applications. The paper presents practical investigations of SiC-JFETs with a modified driver stage in a current source inverter and for comparison in a voltage source inverter topology. Measurement results of both topologies at a frequency of 250 kHz are included. Furthermore differences in the minimising of switching losses for each topology are shown
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- Blohm, Marina
- Boie, Wulf
- Büttner, Clara
- Cußmann, Ilka
- Dettner, Franziska
- Fleischer, Christian
- Freißmann, Jonas
- Fritz, Malte
- Hackenberg, Tabitha
- Hasan, Mominul
- Hilpert, Simon
- Irmansyah Siregar, Yudha
- Laros, Simon
- Md Nasimul Islam Maruf
- Müller, Ulf Philipp
- Sadat, Fahim
- Vanegas-Cantarero, Maria-Mercedes
- Weber, Samanta Alena
- Wiechers, Eva
- Witte, Francesco
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